一种无片外电容的低功耗瞬态增强LDO
DOI:
CSTR:
作者:
作者单位:

江西理工大学电气工程与自动化学院 赣州 341000)

作者简介:

通讯作者:

中图分类号:

TN432

基金项目:

江西省科技计划联合资助项目(20192BBEL50042)、江西省教育厅科学技术研究项目(GJJ200619)资助


A output-capacitorless LDO with transient enhancement and low power
Author:
Affiliation:

School of Electrical Enginnering and Automation, Jiangxi University of Science and Technology,Ganzhou 341000, China

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    针对无片外电容低压差线性稳压器(LDO)低功耗快速瞬态响应问题,提出了一种基于前馈补偿的瞬态增强LDO电路。误差放大器使用电流回收型折叠共源共栅放大器,具有低功耗、高增益等特点。前馈补偿采用多个小增益级连接,在低静态电流下提高系统稳定性。输出电压尖峰通过电容耦合至瞬态增强电路,为功率管栅极提供充、放电路径,提高瞬态响应性能。电路基于SMIC 180 nm CMOS工艺设计,仿真结果显示,在100 μA~50 mA负载电流跳变范围内,LDO瞬态增强后,输出电压上冲尖峰减小343 mV,下降39%;输出电压下冲尖峰减小592 mV,下降57%。负载调整率为0.005 7 mV/mA,线性调整率为0.22 mV/V。电路静态电流约为3 μA,LDO电流效率高达99.99%。

    Abstract:

    In order to solve the low power and fast transient response problem of LDO without off-chip capacitance, a transient enhancement LDO circuit based on feedforward compensation was proposed. The error amplifier uses a recycling folded cascode amplifier, which has low power consumption and high gain. The feedforward compensation is implemented by connecting multiple small gain stages, which improve the system stability with low quiescent current. The output voltage is coupled to the transient enhancement circuit through capacitors, providing a charging and discharging path for the power transistor to improve the transient response performance. The circuit is designed based on the SMIC 180 nm CMOS process, the simulation results show that after the LDO transient enhancement within the load current jumping range of 100 μA to 50 mA. The output voltage overshoot is reduced by 343 mV, or about 39%, the output voltage undershoot is reduced by 592 mV, or about 57% . The load regulation is 0.005 7 mV/mA and the line regulation is 0.22 mV/V. The quiescent current of the circuit is about 3 μA, and the LDO current efficiency is 99.99%.

    参考文献
    相似文献
    引证文献
引用本文

程铁栋,金枭涵.一种无片外电容的低功耗瞬态增强LDO[J].电子测量技术,2025,48(12):26-31

复制
分享
相关视频

文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2025-07-28
  • 出版日期:
文章二维码

重要通知公告

①《电子测量技术》期刊收款账户变更公告