多分立电流源低噪声JFET差分放大技术研究
DOI:
作者:
作者单位:

1.中国船舶集团有限公司第七二二研究所低频电磁通信技术实验室 武汉 430000; 2.吉林大学仪器科学与电气工程学院 长春 130061

作者简介:

通讯作者:

中图分类号:

TP212.13;TH76

基金项目:

中国船舶重工集团第七二二所重点实验室基金、吉林省自然科学基金(2020122207JC)项目资助


Research on differential amplification technology of multi-discrete current source low noise JFET
Author:
Affiliation:

1.Laboratory of Low frequency Electromagnetic Communication Technology with the 722 Research Institute, CSSC, Wuhan 430000, China; 2.College of Instrumentation & Electrical Engineering, Jilin University, Changchun 130061, China

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    结型场效应管具有输入阻抗大、噪声低的优点,已被广泛用于设计高性能瞬变电磁传感器前置放大电路。然而,由于同一型号JFET器件间参数差异较大,多个JFET器件差分并联放大时难以匹配工作。针对这一问题,本文提出了一种基于多分立电流源的低噪声JFET差分放大技术,结合每一路JFET放大支路电路特性单独设计恒流源,并调整为最佳静态工作点,以消除JFET参数离散性引发的放大支路不均流、无法可靠工作问题。最后,通过LTspice仿真与实际电路测试结果表明基于该技术设计的差分放大电路能够可靠工作,其中每一JFET支路电流均为4.68 mA、增益达到40.00 dB,且具有较低的本底噪声(0.51 nV/Hz@1.10 kHz)。本文提出的新方法能够有效消除JFET参数离散性问题,为设计差分并联低噪声TEM传感器前置放大电路奠定良好的技术基础。

    Abstract:

    Junction field-effect transistor has a large input impedance and low noise, which has been widely used to design high performance transient electromagnetic sensor preamplifier circuit. However, the parameters fluctuate greatly between JFET devices of the same type, which makes it difficult to match when the JFET devices are differentially amplified. Aiming at this problem, a low-noise JFET differential amplification technique based on multi-discrete current sources is proposed in this paper. Combined with the characteristics of each JFET amplifier branch circuit, the constant current source is designed separately and adjusted to the optimal static operating point to eliminate the problem of uneven current flow and unreliable operation of the amplifier branch caused by the discreteness of JFET parameters. Finally, the LTspice simulation and actual circuit test results show that the differential amplifier circuit designed based on this technology can work reliably, and the current of each JFET branch is 4.68 mA, and the gain of the amplifier circuit designed based on this technology reaches 40.00 dB and the noise floor is 0.51 nV/Hz@1.10 kHz. The new method proposed in this paper can effectively eliminate the discrete problem of JFET parameters, and lay a good technical foundation for designing a differential parallel low-noise TEM sensor preamplifier circuit.

    参考文献
    相似文献
    引证文献
引用本文

李文彬,王圣捷,朱平杰,叶璇,张洋.多分立电流源低噪声JFET差分放大技术研究[J].电子测量技术,2023,46(1):134-141

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2024-03-11
  • 出版日期: