The InGaAs/InP avalanche photodiode (InGaAs/InP APD) has been one of the core devices for singlephoton detection at the nearinfrared wavelengths. The localization of the singlephoton detection has become a trend. The 1.25 GHz sine wave as the gating pulse was applied to the InGaAs/InP APD in Geiger model. Due to the capacitive response of the APD itself, The generated avalanche signal triggered by the singlephoton was buried in the spike noise. By using the lowpass filter method, we can extract the effective avalanche signal from the peak noise. In order to explore the performances of the domestic InGaAs/InP APD, we measured the related parameters of the domestic at different temperatures and different detection efficiencies, such as dark count rates, afterpulse probability, timing jitter,and we compared the parameters with the imported APDs’. When the domestic InGaAs/InP APD worked in -25 ℃ and the detection efficiency at 10%, the dark count can be as low as 9.9×10-7 /gate, the afterpulse is only 1.5%.From this, we could conclude that the research of the domestic InGaAs/InP APD is close to the foreign level, but there is still room for the improvement.